Optical characteristics of single InAs/InGaAsP/InP (100) quantum dots emitting at 1.55 μm

Applied Physics Letters

Volumn 89, Issue 18, 2006, Pages

  Cade, N I ^a,c   Gotoh, H ^a   Kamada, H ^a   Nakano, H ^a   Anantathanasarn, S ^b   Notzel R ^b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c KING'S COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; EXCITONS; LIGHT EMISSION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE;

ANTIBINDING ENERGY; MICROPHOTOLUMINESCENCE SPECTROSCOPY; OPTICAL PHONONS; QUANTUM INFORMATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33750692014     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2378403     Document Type: Article

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