Lateral wavelength control of InAs/InGaAsP/InP (100) quantum dots in the 1.55 μm region by selective-area metal organic vapor-phase epitaxy

Journal of Applied Physics

Volumn 100, Issue 11, 2006, Pages

  Zhou, D ^a   Anantathanasarn, S ^a   Van Veldhoven, P J ^a   Van Otten, F W M ^a   Eijkemans, T J ^a   De Vries, T ^a   Smalbrugge, E ^a   Notzel R ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; TUNING;

MONOLITHIC INTEGRATION; WAVELENGTH TUNING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33845807468     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2398796     Document Type: Article

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