Fabrication and characterization of GaSb-based monolithic resonant-cavity light-emitting diodes emitting around 2.3 μm and including a tunnel junction

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 14, Issue 4, 2008, Pages 1014-1021

  Ducanchez, Arnaud ^a   Cerutti, Laurent ^a   Gassenq, Alban ^a   Grech, Pierre ^a   Genty, Frédéric ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

Electrically pumped (EP); GaSb; Resonant cavity LED (RC LED); Tunnel junction (TJ)

Indexed keywords

GALLIUM ALLOYS; INJECTION (OIL WELLS); OPTICAL DESIGN; OPTICAL PROPERTIES; SEMICONDUCTING CADMIUM TELLURIDE; TUNNEL JUNCTIONS;

ACTIVE REGION; BRAGG MIRRORS; CONTINUOUS WAVE; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICALLY INJECTED; ELECTRICALLY PUMPED (EP); GAINASSB; GASB; MONOLITHIC STRUCTURES; QUANTUM WELLS; RESONANT-CAVITY LED (RC-LED); RESONANT-CAVITY LIGHT-EMITTING DIODES; ROOM TEMPERATURES; TUNNEL JUNCTION (TJ);

LIGHT EMITTING DIODES;

EID: 48949087621     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2008.922014     Document Type: Article

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