Tunnel junctions for ohmic intra-device contacts on GaSb-substrates

Applied Physics Letters

Volumn 85, Issue 12, 2004, Pages 2388-2389

  Dier, Oliver ^a   Sterkel, Martin ^a   Grau, Markus ^a   Lin Chun, ^a   Lauer, Christian ^a   Amann, Markus Christian ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DESORPTION; DRY ETCHING; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES;

BURIED TUNNEL JUNCTIONS (BTJ); DOPANTS; HOMOJUNCTIONS; INTRA-DEVICE CONTACTS;

TUNNEL JUNCTIONS;

EID: 7044254788     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1793349     Document Type: Article

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