Electrically pumped room temperature CW VCSELs with 2.3μm emission wavelength

Electronics Letters

Volumn 42, Issue 11, 2006, Pages 640-641

  Ortsiefer, M ^a   Bohm G ^b   Grau, M ^a   Windhorn, K ^a   Ronneberg E ^a   Rosskopf, J ^a   Shau, R ^a   Dier, O ^b   Amann, M C ^b  

^a VERTILAS GMBH   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM COMPOUNDS; OPTICAL PUMPING; TEMPERATURE DISTRIBUTION;

EMISSION WAVELENGTHS; OUTPUT POWER; VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSEL);

CONTINUOUS WAVE LASERS;

EID: 33744552287     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20061096     Document Type: Article

References (6)

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2. 4 ', Meas. Sci. Technol., 2003, 14, p. 472-478
3. Shau, R., Ortsiefer, M., Rosskopf, J., Böhm, G., Lauer, C., Maute, M., and Amann, M.-C.: ' Long-wavelength InP-based VCSELs with buried tunnel junction: properties and applications ', Proc. SPIE, 2004, 5364, p. 1-15
4. Baranov, A.N., Rouillard, Y., Boissier, G., Grech, P., Gaillard, S., and Alibert, C.: ' Sb-based monolithic VCSEL operating near 2.2m at room temperature ', Electron. Lett., 1998, 34, p. 281-282
5. 00 output beam ', Electron. Lett., 2004, 40, p. 869-871
6. Kuang, G.K., Böhm, G., Grau, M., Rösel, G., Meyer, R., and Amann, M.-C.: ' 2.12m InGaAs-InGaAlAs-InP diode lasers grown in solid source molecular-beam epitaxy ', Appl. Phys. Lett., 2000, 77, p. 1091-1092