N-InAsSb/p-GaSb tunnel junctions with extremely low resistivity

Electronics Letters

Volumn 42, Issue 7, 2006, Pages 419-420

  Dier, O ^a   Lauer, C ^a   Amann, M C ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SYSTEM STABILITY;

AMPHOTERIC NATURE; INTRA-DEVICE CONTACTS; LONG-TERM STABILITY; N-INASSB/P-GASB TUNNEL JUNCTIONS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33750219369     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20060341     Document Type: Article

References (9)

1. Giehl, A.R., Gumbel, M., Schwender, C., Herhammer, N., and Fouckhardt, H.: ' Waveguide-based type-II heterostructure photodiode on InAs substrate with broad wavelength range photoresponse ', IEEE Photonics Technol. Lett., 2004, 16, (5), p. 1358-1360
2. Fay, P., Jiang, L., Xu, Y., Bernstein, G.H., Chow, D.H., Schulmann, J.N., Dunlap, H.L., and de los Santos, H.J.: ' Fabrication of monolithically- integrated InAlAs/InGaAs/InP HEMT and InAs/AlSb/GaSb resonant interband tunneling diodes ', IEEE Trans. Electron. Devices, 2001, 48, (6), p. 1282-1284
3. McMorrow, D., Magno, R., Bracker, A.S., Bennett, B.R., Buchner, S., and Melinger, J.S.: ' Charge-collection dynamics of AlSb-InAs-GaSb resonant interband tunneling diodes (RITDs) ', IEEE Trans. Nucl. Sci., 2001, 48, (6), p. 1973-1979
4. Moon, J.S., Chow, D.H., Schulman, J.N., Deelman, P., and Zinck, J.J.: ' Experimental demonstration of split-gated resonant interband tunneling devices ', Appl. Phys. Lett., 2004, 84, (4), p. 678-680
5. Lauer, C., Ortsiefer, M., Shau, R., Rosskopf, J., Böhm, G., Rönneberg, E., Köhler, F., and Amann, M.-C.: ' 80°C continuous-wave operation of 2.01-μm wavelength InGaAlAs-InP vertical-cavity surface-emitting lasers ', IEEE Photonics Technol. Lett., 2005, 16, (10), p. 2209-2211
6. Dier, O., Sterkel, M., Grau, M., Lin, C., Lauer, C., and Amann, M.-C.: ' Tunnel junctions for ohmic intra-device contacts on GaSb-substrates ', Appl. Phys. Lett., 2004, 85, (12), p. 2388-2389
7. -3) n- and p-doped GaSb-based materials ', J. Vac. Sci. Technol. B, 2005, 23, (2), p. 349-353
8. +-InAsSb contact layer ', IEEE Electron Device Lett., submitted for publication
9. +-InGaAs as determined by a new evaluation method ', J. Electrochem. Soc., 1993, 140, (3), p. 847-850