Low-resistance InGa(Al)As tunnel junctions for long wavelength vertical-cavity surface-emitting lasers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 A, 2000, Pages 1727-1729

  Ortsiefer, Markus ^a   Shau, Robert ^a   Böhm, Gerhard ^a   Köhler, Fabian ^a   Abstreiter, Gerhard ^a   Amann, Markus Christian ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

InGaAlAs InP; Long wavelength; Optical communication; Semiconductor laser; Surface emitting laser; Tunnel junction

Indexed keywords

EID: 0001499016     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.1727     Document Type: Article

References (8)

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