Effects of thermal annealing on the band gap of GaInAsSb

Applied Physics Letters

Volumn 86, Issue 15, 2005, Pages 1-3

  Dier, Oliver ^a   Dachs, Susanne ^a   Grau, Markus ^a   Lin, Chun ^a   Lauer, Christian ^a   Amann, Markus Christian ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; INDIUM; MOLECULAR BEAM EPITAXY; OXIDATION; PHOTOLUMINESCENCE; SUBSTRATES;

BAND GAP; GROWTH PARAMETERS; MULTIPLE-QUANTUM-WELL (MQW) STRUCTURE; THERMAL ANNEALING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 20844450891     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1900946     Document Type: Article

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