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Volumn 22, Issue 10, 2007, Pages 1140-1144

AlAsSb/GaSb doped distributed Bragg reflectors for electrically pumped VCSELs emitting around 2.3 νm

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; INTERFACES (MATERIALS); OPTICAL LOSSES; SEMICONDUCTOR DOPING; SURFACE EMITTING LASERS;

EID: 34748860409     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/10/010     Document Type: Article
Times cited : (24)

References (22)
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  • 6
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    • Dias I F L, Duarte J L, Laureto E and Gelamo R V 2000 Electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs- distributed Bragg mirrors on InP Superlattices Microstruct. 28 29-33
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    • Intracavity laser absorption spectroscopy with a vertical external cavity surface emitting laser at 2.3 νm: Application to water and carbon dioxide
    • Garnache A, Liu A, Cerutti L and Campargue A 2005 Intracavity laser absorption spectroscopy with a vertical external cavity surface emitting laser at 2.3 νm: application to water and carbon dioxide Chem. Phys. Lett. 416 22-7
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    • Garnache, A.1    Liu, A.2    Cerutti, L.3    Campargue, A.4
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    • Wang, C.A.1    Shiau, D.A.2    Wuang, R.K.3    Harris, C.T.4    Connors, M.K.5
  • 18
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    • Schubert, E.F.1
  • 19
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    • Digital alloy growth in mixed As/Sb heterostructures
    • Kaspi R and Donati G P 2003 Digital alloy growth in mixed As/Sb heterostructures J. Cryst. Growth 251 515-20
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  • 20
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    • High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 νm
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.