Temperature-dependent single-electron tunneling effect in lightly and heavily doped GaN nanowires

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 23, 2004, Pages

  Kim, Jae Ryoung ^a   Kim, Byoung Kye ^a   Lee, I J ^a   Kim, Ju Jin ^a   Kim, Jinhee ^b   Lyu, Seung Chul ^c   Lee, Cheol Jin ^c  

^a Chonbuk National University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; NITROGEN;

ARTICLE; ELECTRODE; ELECTRON; ELECTRON TRANSPORT; EQUIPMENT; OSCILLATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; TEMPERATURE DEPENDENCE;

EID: 37649032815     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.233303     Document Type: Article

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