Spatially resolved residual stress assessments of GaN film on sapphire substrate by cathodoluminescence piezospectroscopy

Journal of Applied Physics

Volumn 104, Issue 2, 2008, Pages

  Pezzotti, Giuseppe ^a   Porporati, Alessandro Alan ^b   Leto, Andrea ^a   Zhu, Wenliang ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b CNR Kyoto Research Center   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ABSORPTION SPECTROSCOPY; CATHODOLUMINESCENCE; CORUNDUM; DATA STRUCTURES; ELECTRON BEAMS; ELECTRON OPTICS; GALLIUM ALLOYS; GALLIUM NITRIDE; IMAGE SEGMENTATION; LIGHT EMISSION; LIQUID PHASE EPITAXY; LUMINESCENCE; MOLECULAR BEAM EPITAXY; PARTICLE BEAMS; RESIDUAL STRESSES; SAPPHIRE; SEMICONDUCTING GALLIUM; STRENGTH OF MATERIALS; STRESS CONCENTRATION; STRESSES; SUBSTRATES; THERMAL EXPANSION; THERMAL SPRAYING; THICK FILMS;

ANALYTICAL MODELLING; BEAM POWER; COMBINED EFFECTS; CROSS SECTIONING; ELECTRON BEAM VOLTAGE; ELECTRON PROBING; FILM STRUCTURES; GAN FILMS; GROWTH PROCESSES; IN-PLANE; MECHANISTICS; MISFIT DISLOCATIONS; PIEZO-SPECTROSCOPY; RESIDUAL STRESS DISTRIBUTIONS; RESIDUAL STRESS FIELDS; RESPONSE FUNCTIONS; SAPPHIRE SUBSTRATES; SPATIALLY RESOLVED; SPECTRAL DECONVOLUTION; STRESS DISTRIBUTIONS; STRESS PRO FILES; SURFACE STRESSES; THIN FILMS; TOP SURFACE;

FILM GROWTH;

EID: 48849084717     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2956694     Document Type: Article

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