Film edge-induced stress in substrates and finite films

Thin Solid Films

Volumn 274, Issue 1-2, 1996, Pages 106-112

  Atkinson, A ^a,c   Johnson, T ^a   Harker, A H ^a   Jain, S C ^b,d  

^a RICARDO UK LTD   (United Kingdom)

^b UNIVERSITY OF OXFORD   (United Kingdom)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

^d IMEC   (Belgium)

Author keywords

Computer simulation; Elastic properties; Semiconductors; Stress; Surface stress

Indexed keywords

APPROXIMATION THEORY; CALCULATIONS; COMPUTER SIMULATION; CRYSTAL DEFECTS; ELASTICITY; INTEGRATION; NUMERICAL METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; STRESS ANALYSIS; STRESS RELAXATION; SUBSTRATES;

EDGE INDUCED RELAXATION; FILM EDGE INDUCED STRESS; SEMI INFINITE THIN FILM;

THIN FILMS;

EID: 0030101072     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)07090-7     Document Type: Article

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