Oxygen adsorption on Ge-covered Si(100) surfaces

Surface Science

Volumn 357-358, Issue , 1996, Pages 748-752

  Fukuda, T ^a   Ogino, T ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Adsorption kinetics; Auger electron spectroscopy; Low index single crystal surfaces; Models of surface chemical reactions; Oxidation; Scanning tunneling microscopy; Semiconductor semiconductor heterostructures; Silicon; X ray photoelectron spectroscopy

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMISORPTION; EPITAXIAL GROWTH; HETEROJUNCTIONS; MONOLAYERS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SUBSTRATES; SURFACE PHENOMENA; X RAY PHOTOELECTRON SPECTROSCOPY;

EPITAXIAL GERMANIUM OVERLAYERS; GERMANIUM COVERED SILICON SURFACES; OXYGEN ADSORPTION; SEMICONDUCTOR SEMICONDUCTOR HETEROSTRUCTURES; SILICON SUBSTRATE;

OXYGEN;

EID: 13544264911     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00257-9     Document Type: Article

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