Improved GaN film overgrown with a molybdenum nanoisland mask

Applied Physics Letters

Volumn 93, Issue 3, 2008, Pages

  Lin, Chaotong ^a   Yu, Guanghui ^a   Wang, Xinzhong ^a   Cao, Mingxia ^a   Gong, Hang ^a   Qi, Ming ^a   Li, Aizhen ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAVITY RESONATORS; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; EPITAXIAL GROWTH; FULL WIDTH AT HALF MAXIMUM; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLYBDENUM; OPTICAL DESIGN; REFLECTION; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS; THERMAL EVAPORATION; VAPORS; X RAY DIFFRACTION ANALYSIS;

AMERICAN INSTITUTE OF PHYSICS (AIP); COMPRESSIVE STRAIN RELAXATION; DISLOCATION DENSITIES; ELECTRON BEAM EVAPORATION (EBE); GAN FILMS; HALF MAXIMUM; HIGH RESOLUTION X RAY DIFFRACTION (HR XRD); HYDRIDE VAPOR-PHASE EPITAXY (HVPE); NANO ISLANDS; OPTICAL QUALITIES; PHOTOLUMINESCENCE (PL) SPECTRUM; ROCKING CURVE (RC); SIGNIFICANT REDUCTION;

SEMICONDUCTING GALLIUM;

EID: 48249129743     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2962983     Document Type: Article

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