Low resistance cathode metallization and die-bonding in silicon carbide P-N junction diodes

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 717-720

  Kim, Tae Hong ^a   Lee, Seung Yong ^a   Lee, Jang Sub ^b   Suh, Duk Il ^a   Cho, Nam Kyu ^a   Bahng, Wook ^c   Kim, Nam Kyun ^c   Choi, Sung Yong ^b   Kim, Hak Jong ^b   Lee, Sang Kwon ^a  

^a Chonbuk National University   (South Korea)

^b SP Semiconductor and Communication Co Ltd   (South Korea)

^c Korea Electrotechnology Research Institute (KERI)   (South Korea)

Author keywords

CMP; Die attaching; Die bonding; Ohmic Contacts; SiC P N Junction Diodes

Indexed keywords

CATHODES; CHEMICAL BONDS; CHEMICAL MECHANICAL POLISHING; DIES; ELECTRIC CONTACTORS; METALLIZING; OHMIC CONTACTS; SEMICONDUCTOR JUNCTIONS; SURFACE ROUGHNESS;

CIRCULAR TRANSMISSION; DIE BONDING; LOW RESISTANCE; PN JUNCTION DIODES; SPECIFIC CONTACT RESISTANCES;

SILICON CARBIDE;

EID: 38449123739     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.717     Document Type: Conference Paper

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