Fabrication and characterization of nickel silicide ohmic contacts to n-type 4H silicon carbide

Journal of Physics: Conference Series

Volumn 100, Issue PART 4, 2008, Pages

  Kuchuk, A ^a   Kladko, V ^a   Guziewicz, M ^b   Piotrowska, A ^b   Minikayev, R ^c   Stonert, A ^d   Ratajczak, R ^d  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b Research Group of Integrated Circuits and System Design   (Poland)

^c INSTITUTE OF PHYSICS   (Poland)

^d SOLTAN INSTITUTE FOR NUCLEAR STUDIES   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONTACTORS; FABRICATION; NICKEL COMPOUNDS; OHMIC CONTACTS; SILICIDES; SILICON; SILICON CARBIDE; MORPHOLOGY; NANOSCIENCE; NICKEL; SURFACE MORPHOLOGY; VACUUM APPLICATIONS;

4H SILICON CARBIDE; CONTACT RESISTIVITIES; CONTACT STRUCTURE; DC MAGNETRON SPUTTERING; FABRICATION AND CHARACTERIZATIONS; I-V MEASUREMENTS; OHMIC BEHAVIOUR; THICKNESS RATIO;

NICKEL; NICKEL COMPOUNDS;

EID: 77954330324     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/100/4/042003     Document Type: Conference Paper

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