Microscopic mapping of specific contact resistances and long-term reliability tests on 4H-silicon carbide using sputtered titanium tungsten contacts for high temperature device applications

Journal of Applied Physics

Volumn 92, Issue 1, 2002, Pages 253-260

  Lee, S K ^a   Zetterling, C M ^a   Ostling M ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY KTH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

4H SILICON CARBIDE; CAPPING LAYER; CONTACT RESISTIVITIES; DOPING CONCENTRATION; HIGH TEMPERATURE; HIGH TEMPERATURE DEVICE; INDUCTIVELY-COUPLED; PLATINUM AND GOLD; RELIABILITY TEST; SACRIFICIAL OXIDATION; SPECIFIC CONTACT RESISTANCES; TITANIUM TUNGSTEN; VACUUM CHAMBERS;

ELECTRIC CONTACTORS; INDUCTIVELY COUPLED PLASMA; MAPPING; OHMIC CONTACTS; PLATINUM; SILICON CARBIDE; TITANIUM; TUNGSTEN;

CONTACT RESISTANCE;

EID: 0036639286     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1481201     Document Type: Article

References (32)

1. R. J. Trew, Phys. Status Solidi A 162, 409 (1997). psa PSSABA 0031-8965
2. P. Tobias, A. Baranzahi, A. L. Spetz, O. Kordina, E. Janzen, I. Lundström, IEEE Electron Device Lett. 18, 287 (1997). edl EDLEDZ 0741-3106
3. A. A. Yassen, C. A. Zorman, M. Mehregany, J. Microelectromech. Syst. 8, 237 (1997). jiy JMIYET 1057-7157
4. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd ed. (Clarendon, Oxford, 1988), Vol. 19.
5. L. M. Porter and R. F. Davis, Mater. Sci. Eng., B 34, 83 (1995). msb MSBTEK 0921-5107
6. J. Crofton, L. M. Porter, J. R. Williams, Phys. Status Solidi B 202, 581 (1997). psb PSSBBD 0370-1972
7. J. Crofton, P. G. McMullin, J. R. Williams, M. J. Bozack, J. Appl. Phys. 77, 1317 (1995). jap JAPIAU 0021-8979
8. B. Pecz, G. Radnoczi, S. Cassette, C. Brylinski, C. Arnodo, O. Noblanc, Diamond Relat. Mater. 6, 1428 (1997). drm DRMTE3 0925-9635
9. J. Crofton, J. M. Ferrero, P. A. Barnes, J. R. Williams, M. J. Bozack, C. C. Tin, C. D. Ellis, J. A. Spitznagel, P. G. McMullin, in Amorphous and Crystalline Silicon Carbide IV, edited by C. Y. Yang, M. M. Rahman, G. L. Harris (Springer, Berlin, 1992), p. 163.
10. P. G. McMullin, J. A. Spitznagel, J. R. Szedon, J. A. Costello, in Contact Resistance of High-Temperature SiC Metallization (Springer, New York, 1992), p. 275.
11. T. Uemoto, Jpn. J. Appl. Phys., Part 2 34, L7 (1995). jjc JAPLD8 0021-4922
12. C. Hallin, R. Yakimova, B. Pecz, A. Georgieva, T. Marinova, L. Kasamakova, R. Kakanakov, E. Janzen, J. Electron. Mater. 26, 119 (1997). jem JECMA5 0361-5235
13. M. G. Rastegaeva, A. N. Andreev, A. A. Petrov, A. I. Babanin, M. A. Yagovkina, I. P. Nikitina, Mater. Sci. Eng., B 46, 254 (1997). msb MSBTEK 0921-5107
14. L. G. Fursin, J. H. Zhao, M. Weiner, Electron. Lett. 37, 1092 (2001). ell ELLEAK 0013-5194
15. T. Jang, L. M. Porter, G. W. Rutsch, B. Odekirk, Appl. Phys. Lett. 75, 3956 (1999). apl APPLAB 0003-6951
16. T. Jang, B. Odekirk, L. D. Madsen, L. M. Porter, J. Appl. Phys. 90, 4555 (2001). jap JAPIAU 0021-8979
17. S.-K. Lee, C.-M. Zetterling, M. Östling, Mater. Res. Soc. Symp. Proc. 640, H7.2 (2000). mrs MRSPDH 0272-9172
18. V. Hoffman, Solid State Technol. 26, 425 (1983). ste SSTEAP 0038-111X
19. J. Kriz, K. Gottfried, T. Scholz, C. Kaufmann, T. Gebner, Mater. Sci. Eng., B 46, 180 (1997). msb MSBTEK 0921-5107
20. J. Crofton, J. R. Williams, M. J. Bozack, P. A. Barnes, Inst. Phys. Conf. Ser. 137, 719 (1993). ipc IPHSAC 0305-2346
21. S.-K. Lee, C.-M. Zetterling, M. Östling, J. P. Palmquist, U. Jansson, Microelectron. Eng. 60, 261 (2002). mie MIENEF 0167-9317
22. A. Elshabini and F. D. Barlow, Thin Film Technology Handbook (McGraw-Hill, New York, 1997).
23. Cree Research Inc., Durham NC.
24. S. E. Babcock and K. N. Tu, J. Appl. Phys. 53, 6898 (1982). jap JAPIAU 0021-8979
25. Computer Graphic Service Ltd., Ithaca, NY.
26. H. H. Berger, Solid-State Electron. 15, 145 (1972). sel SSELA5 0038-1101
27. E. Danielsson, C.-M. Zetterling, M. Östling, S.-K. Lee, K. Linthicum, D. B. Thomson, O. H. Nam, R. F. Davis, Mater. Sci. Forum 338-342, 1049 (2000). msf MSFOEP 0255-5476
28. J. J. Wang, E. S. Lambers, S. J. Perton, M. Östling, C.-M. Zetterling, J. M. Grow, F. Ren, R. J. Shul, J. Vac. Sci. Technol. A 16, 2204 (1998). jva JVTAD6 0734-2101
29. F. A. Khan, B. Roof, L. Zhou, I. Adesida, J. Electron. Mater. 30, 212 (2001). jem JECMA5 0361-5235
30. E. Danielsson, S.-K. Lee, C.-M. Zetterling, M. Östling, J. Electron. Mater. 30, 247 (2001). jem JECMA5 0361-5235
31. S.-K. Lee, S.-M. Koo, C.-M. Zetterling, M. Östling, J. Electron. Mater. (to be published).
32. C. M. Winter and P. Pizzo, Proceedings of the IEEE International Electron Manufacturing Technology Symposium 1992, p. 124.