Cubic InN on r-plane sapphire

Superlattices and Microstructures

Volumn 36, Issue 4-6, 2004, Pages 487-495

  Cimalla, V ^a   Kaiser, U ^a   Cimalla, I ^a   Ecke, G ^a   Pezoldt, J ^a   Spiess, L ^a   Ambacher, O ^a   Lu, H ^b   Schaff, W ^b  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRON MOBILITY; ENERGY GAP; HALL EFFECT; LATTICE CONSTANTS; METALLIZING; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET SPECTROSCOPY; X RAY DIFFRACTION ANALYSIS;

HALL MOBILITY; PHOTOTHERMAL DEFLECTION SPECTROSCOPY (PDS); ROOM TEMPERATURE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 9944246461     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.09.054     Document Type: Article

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