Characteristics of ultrashallow p+/n junction prepared cluster boron (B18H22) ion implantation and excimer laser annealing

Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06

Volumn , Issue , 2006, Pages 48-49

  Heo, Sungho ^a   Oh, Seokjoon ^a   Hasan, Musarrat ^a   Cho, H T ^b   Krull, W A ^b   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Ceradyne Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; BORON; EXCIMER LASERS; ION IMPLANTATION; MELTING;

EXCIMER LASER ANNEALING (ELA); IMPLANTATION ENERGY; ULTRASHALLOW JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 34250166874     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. A. Agawal, H.-J. Gossmann, D. C. Jacobson, D. J. Eaglesham, M. Sosnowski, J. M. Poate, I. Yamada, J. Matsuo, and T. E. Haynes, Appl. Phys. Lett. 73, (1998) 2015.
2. th inter. Workshop on Junction Technol.(Shanghai, china, 2004) p. 18.