P-type gate electrode formation using B18H22 ion implantation

AIP Conference Proceedings

Volumn 866, Issue , 2006, Pages 202-205

  Henke, Dietmar ^a   Jakubowski, Frank ^a   Deichler, Josef ^a   Venezia, Vincent C ^b   Ameen, M S ^b   Harris, M A ^b  

^a QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

^b AXCELIS TECHNOLOGIES   (United States)

Author keywords

Cluster ion implantation; CMOS; DRAM; Octadecaborane; Poly gate doping

Indexed keywords

EID: 33846944010     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2401495     Document Type: Conference Paper

References (3)

1. J. W. Faul and D.Henke, Nucl. Instr. and Meth. in Phys. Res. B 237 (2005) 228-234.
2. D.C. Jacobson, K. Bourdelle, H-J. Gossmann, M. Sosnowski, M. A. Albano, V.Babaram, J.M. Poate, A. Agarwal, A. Perel, T. Horsky, "Decaborane, an Alternative Approach to Ultra Low Energy Ion Implantation", Proceedings IIT 2000, p. 300.
3. D. Tieger, W. DiVergilio, E. C. Eisner, M. Harris, T.J. Hsieh, J. Miranda, W. Reynolds, V. Venezia, "ClusterBoron™ Implants on a High Current Implanter", this conferenc