Investigation of converted p+ poly-Si gate formed by B 18Hx+ cluster ion implantation

AIP Conference Proceedings

Volumn 866, Issue , 2006, Pages 163-166

  Hwang, Sun Hwan ^a   Kim, D S ^a   Joo, Y H ^a   Oh, J G ^a   Lee, J K ^a   Jung, T W ^a   Cho, H J ^a   Sohn, Y S ^a   Sheen, D S ^a   Pyi, S H ^a   Kim, Steve ^b   Huh, T H ^b   Krull, W A ^c   Cho, H T ^c  

^a Hynix Semiconductor Inc   (South Korea)

^b Axcelis Technology Ltd   (South Korea)

^c Ceradyne Inc   (United States)

Author keywords

B18Hx+; Cluster boron; P+ poly

Indexed keywords

EID: 33846974375     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2401485     Document Type: Conference Paper

References (3)

1. Y. Sasaki et al, Symp. On VLSI Technology (2004) p. 180
2. K. Goto et al, Tech. Dig. Of IEDM (1996) p. 435
3. D.C. Jacobson et al, International Conference on Ion Implantation Technology (2000) p. 300