Characterization of B2H6 plasma doping for converted p+ poly-Si gate

AIP Conference Proceedings

Volumn 866, Issue , 2006, Pages 25-28

  Oh, Jae Geun ^a   Lee, J K ^a   Hwang, S H ^a   Cho, H J ^a   Sohn, Y S ^a   Sheen, D S ^a   Pyi, S H ^a   Lee, S W ^b   Hahn, S H ^b   Jeon, Y B ^c   Fang, Z ^c   Singh, V ^c  

^a Hynix Semiconductor Inc   (South Korea)

^b Varian Korea Ltd   (South Korea)

^c VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

B2H6 plasma doping; P+ poly Si

Indexed keywords

EID: 33846971998     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2401453     Document Type: Conference Paper

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