Decaborane, an alternative approach to ultra low energy ion implantation

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 300-303

  Jacobson, D C ^a   Bourdelle, Konstantin ^a   Gossmann, H J ^a   Sosnowski, M ^b   Albano, M A ^b   Babaram, V ^b,e   Poate, J M ^c   Agarwal, Aditya ^c   Perei, Alex ^c   Horsky, Tom ^d  

^a AGERE SYSTEMS   (United States)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^c Axcelis Corporation   (United States)

^d Brooks Automation ^*  (United States)

^e INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATIVE APPROACH; ALTERNATIVE TECHNOLOGIES; B ATOMS; BEAM PROPERTIES; BREAK-UP; DECABORANES; DEPTH PROFILE; DEVICE CHARACTERISTICS; ENERGY RANGES; EQUIVALENT ENERGY; FLUENCES; ION ENERGIES; ION IMPLANTERS; MOLECULAR IONS; MONOMER IONS; SI WAFER; SPACE CHARGES; SPUTTERING YIELDS; ULTRA-SHALLOW P; ULTRALOW ENERGY; ULTRALOW ENERGY ION IMPLANTATION;

ATOMS; BEAM PLASMA INTERACTIONS; BORON; BORON COMPOUNDS; ION BEAMS; ION BOMBARDMENT; ION IMPLANTATION; ION SOURCES; MOS DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SPUTTERING;

SILICON WAFERS;

EID: 78649838888     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924148     Document Type: Conference Paper

References (11)

1. "The International Technology Roadmap for Semiconductors", Semiconductor Industry Association, (1999).
2. Applied Materials Product Announcement ( 1996).
3. N. W. Cheung, W. En, E. Jones, and C. Yu, Mat. Res. Soc. Symp. Proc, 279, 297 (1993).
4. Yamada I., Matsuo J., Insepov Z., Takeuchi D., Toyoda N., "Surface processing by gas cluster ion beams at the atomic level", J.Vac.Sci.Technol. A14 (1996) 781.
5. K. Goto, J. Matsuo, T. Sugii, I. Yamada And T. Hisatsugu, IEDM-96, IEEE, 768-771 (1997).
6. K. Goto, J. Matsuo, Y. Tada, T. Tanaka, Y. Momiyama, T. Sugii, And I. Yamada, 1EDM-97, IEEE, 18.4.1-18.4.4(1997).
7. A. Agarwal, H. J. Gossmann, D. C. Jacobson, D. J. Eaglesham, M. Sosnowski, J. M. Poate, I. Yamada, J. Matsuo, and T. E. Haynes, Appl. Phys. Lett., 75, 2015 (1998).
8. Dirks A. J., Bancken, P.H.L., Politiek, J. Cowern, N.E.B., Snijders, J.H.M., van Berkum, J.G.M., and Verheijen, M.A., Ion Implantation Technology-IIT'98 Internat. Conf. Kyoto, Japan, June 1998.
9. M. Sosnowski, R. Gurudath, J. M. Poate, A. Mujsce, And D. C. Jacobson, Mat. Res. Soc. Symp. Proc, 568, 49-54 (1999).
10. M. Sosnowski, M. A. Albano, V. Babaram, R. Gurudath, J.M. Poate, Dale Jacobson, Journal Of Electrochemical Society - To Be Published (2000).
11. J. Kirschner, Rev. Sei. Instrum., 57, 2640-2642 (1996).