Influence of polarization on the properties of GaN based FET structures

Physica Status Solidi C: Conferences

Volumn 0, Issue 6 SPEC. ISS., 2003, Pages 1919-1939

  Neuburger, M ^a   Daumiller, I ^a   Kunze, M ^a   Seyboth, M ^a   Jenkins, T ^b   Van Nostrand, J ^b   Kohn, E ^a  

^a UNIVERSITY OF ULM   (Germany)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; HEAT CONDUCTION; IONIZATION; LIGHT POLARIZATION; PROBLEM SOLVING; SEMICONDUCTOR MATERIALS;

CHARGE DENSITIES; CHARGE DIPOLES; POLAR SEMICONDUCTORS; SURFACE POLARIZATION;

GALLIUM NITRIDE;

EID: 4744353812     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303134     Document Type: Conference Paper

References (27)

1. E. Kohn, GAAS '99, Munich, Germany, Proceedings, 1999, pp. 240-245.
2. C. Nguyen, Electronics Letters, vol 35, 1999, pp. 1380-1382.
3. I. Daumiller, IEEE Electron Device Letters, vol 22, 2001, pp. 62-64.
4. F. Bernadini, Physical Review B, vol 56, no. 16, 1997.
5. th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, Abstracts, Chernogolovka, Moscow, Russia, May 2002.
6. A. D. Bykhovski, Applied Physics Letters, vol 73, 1998, pp. 3577-3579.
7. J. P. Ibbetson, Applied Physics Letters, vol. 77, 2000, pp. 250-252
8. B. M. Green, IEEE Electron Device Letters, vol. 21, 2000, pp. 268-270
9. G. Simin, IEEE Electron Device Letters, vol. 23, 2002, pp. 458-460.
10. F. D. Sala, Applied Physics Letters, vol 74, 1999, pp. 2002-2004.
11. I. Daumiller, IEEE Electron Device Letters, vol. 20, 1999, pp. 448-450.
12. A. Pisch, Journ. Cryst. Growth, vol 187, 1998, pp. 329-332.
13. E. Kohn, GAAS '99, Munich (Germany), Oct. 1999, Proceedings 240-245.
14. I. Daumiller, 1997 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Cornell, USA, Proceedings, 1997, pp. 227-235.
15. P. Schmid, 9th European Heterostructure Technology Workshop (HETECH 99), IENM, University of Lille, Lille (France), Sept. 27-28 (1999), paper 2 in session E.
16. M. Seelmann-Eggbert, Diamond and Related Materials, vol. 10, 2001, pp. 744-749.
17. E. Kohn, Electronic Letters, vol 38, 2002, pp. 603-605.
18. E. Kohn, Electronics Letters, vol. 35, 1999, pp. 1022-1024.
19. R. Vetury, IEEE Tran. Electron Devices, vol. 48, 2001, pp. 560-566.
20. A. Vescan, Inst. Of Phys. (IoP), Series 166, 2000, pp. 503-506.
21. E. Kohn, IEEE IEEE , vol. 51, 2003, pp. 634-642.
22. O. Ambacher, Jorunal of Applied Physics, vol 87, 2000, 334-344
23. th International Workshop on Wide Bandgap III-Nitrides, Richmond, Virginia, March 2002.
24. E. Kohn, MRS 2001 Spring Meeting Proceedings, vol. 680E, no. E3.1, 2001.
25. E. Kohn, IWPSD, International Workshop on the Physics of Semiconductor Devices, Dehli (India), 2001.
26. M. Neuburger, phys. Stat. sol.(C), vol. 0, no. 1, 2002, pp-86-89
27. I. Daumiller, Electronics Letters, vol 35, 1999, pp. 1588-1590.