Piezoelectric doping and elastic strain relaxation in AlGaN-GaN heterostructure field effect transistors

Applied Physics Letters

Volumn 73, Issue 24, 1998, Pages 3577-3579

  Bykhovski, A D ^a   Gaska, R ^b   Shur, M S ^c  

^a University of Virginia   (United States)

^b APA Optronics   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0346586797     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122829     Document Type: Article

References (10)

1. P. M. Asbeck, E. T. Yu, S. S. Lau, G. J. Sullivan, J. Van Hove, and J. M. Redwing, Electron. Lett. 33, 1230 (1997).
2. E. T. Yu, G. J. Sullivan, P. M. Asbeck, C. D. Wang, D. Qiao, and S. S. Lau, Appl. Phys. Lett. 71, 2794 (1997).
3. J. H. van der Merwe, J. Appl. Phys. 34, 123 (1963).
4. R. Gaska, J. Yang, A. Osinsky, A. D. Bykhovski, and M. S. Shur, Appl. Phys. Lett. 71, 3673 (1997).
5. A. Bykhovski, B. Gelmont, and M. S. Shur, J. Appl. Phys. 74, 6734 (1993).
6. E. S. Hellman, MRS Internet J. Nitride Semicond. Res. 3, 11 (1998).
7. A. D. Bykhovski, B. L. Gelmont, and M. S. Shur, J. Appl. Phys. 81, 6332 (1997).
8. J. P. Hirth and J. Lothe, Theory of Dislocations (Wiley, New York, 1982), pp. 231, 278.
9. A. D. Bykhovski, B. L. Gelmont, and M. S. Shur, J. Appl. Phys. 78, 3691 (1995).
10. A. Bykhovski, B. Gelmont, M. S. Shur, and A. Khan, in Proceedings of International Conference on Silicon Carbide and Related Materials-1993, Washington DC (Institute of Physics Publishing, Institute of Physics Conference Series Number 137, 1994), p. 691.