The role of charge dipoles in GaN HFET design

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 86-89

  Neuburger, M ^a   Daumiller, I ^a   Kunze, M ^a   Zimmermann, T ^a   Jogai, B ^b   Van Nostrand, J ^b   Sewell, J ^b   Jenkins, T ^b   Dadgar, A ^c   Krost, A ^c   Kohn, E ^a  

^a UNIVERSITY OF ULM   (Germany)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; INDIUM ALLOYS; JUNCTION GATE FIELD EFFECT TRANSISTORS; NITRIDES; POLARIZATION; QUANTUM THEORY; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR DOPING;

CARRIER DISTRIBUTIONS; COMMERCIAL DEVICES; ENGINEERING MODELING; GAN-BASED HETEROSTRUCTURES; POLARIZATION EFFECT; POLARIZATION FIELD; POLARIZATION INDUCED CHARGES; QUANTUM MECHANICAL;

WIDE BAND GAP SEMICONDUCTORS;

EID: 3342875945     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390123     Document Type: Conference Paper

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