On the reverse IV-characteristics of Schottky diodes on n-GaN

Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Volumn , Issue , 1997, Pages 227-235

  Daumiller, I ^a   Vescan, A ^a   Heinle, U ^a   Scholz, F ^a   Kohn, E ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; GOLD; LEAKAGE CURRENTS; NITRIDES; PLATINUM; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON ALLOYS; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

SEMICONDUCTING GALLIUM NITRIDE;

SCHOTTKY BARRIER DIODES;

EID: 0031337854     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/cornel.1997.649362     Document Type: Conference Paper

References (7)