Anti-domain-free GaP, grown in atomically flat (001) Si sub-μm-sized openings

Applied Physics Letters

Volumn 80, Issue 24, 2002, Pages 4546-4548

  Ohlsson, B J ^a   Malm, J O ^a   Gustafsson, A ^a   Samuelson, L ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIPHASE DOMAIN BOUNDARY; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; LOW TEMPERATURES; MONOCRYSTALLINE; SELECTIVE-AREA EPITAXY; SI(0 0 1);

GALLIUM ALLOYS; NANOCRYSTALS; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79955999172     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1485311     Document Type: Article

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