Distribution of zinc, resistivity, and photosensitivity in a vertical Bridgman grown Cd1-xZnxTe ingot

Journal of Crystal Growth

Volumn 310, Issue 15, 2008, Pages 3482-3487

  Babentsov, V ^a   Franc, J ^b   Fauler, A ^c   Fiederle, M ^c   James, R B ^d  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b CHARLES UNIVERSITY   (Czech Republic)

^c Materialforschungszentrum   (Germany)

^d BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

A1. Point defects; A2. Bridgman technique; B1. Semiconducting II VI materials

Indexed keywords

CADMIUM; CADMIUM COMPOUNDS; LIGHT SENSITIVE MATERIALS; MICROFLUIDICS; OPTICAL PROPERTIES; PHOTOSENSITIVITY; ZINC SULFIDE;

BRIDGMAN;

ZINC;

EID: 46749109530     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.05.017     Document Type: Article

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