Regular and anomalous-type conversion of p-CdTe during Cd-rich annealing

Journal of Electronic Materials

Volumn 34, Issue 6, 2005, Pages 957-962

  Belas, E ^a   Franc, J ^a   Grill, R ^a   Toth, A L ^b   Horodysky, P ^a   Moravec, P ^a   Hoschl P ^a  

^a CHARLES UNIVERSITY   (Czech Republic)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

Annealing; CdTe; Diffusion; p n junction formation; Photoluminescence

Indexed keywords

ANNEALING; DIFFUSION; FUNCTIONS; HALL EFFECT; IMAGING TECHNIQUES; PHOTOLUMINESCENCE; REACTION KINETICS; STOICHIOMETRY; SUBSTRATES; THERMAL EFFECTS;

CDTE; N-TO-P RECONVERSION; P-N JUNCTION FORMATION; P-TO-N CONVERSION;

CADMIUM COMPOUNDS;

EID: 21744436933     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0050-4     Document Type: Conference Paper

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