Semi-insulating cadmium telluride at low impurity concentrations

Journal of Materials Research

Volumn 19, Issue 2, 2004, Pages 405-408

  Fiederle, M ^c   Babentsov, V ^b   Fauler, A ^c   Witte, W ^c   Benz, K W ^c   James, R B ^a  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

CRYOSTATS; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; IMPURITIES; MASS SPECTROMETRY; PHOTOLUMINESCENCE; PHOTOSENSITIVITY; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS; SUBLIMATION;

DOPANTS; GLOW DISCHARGE MASS SPECTROSCOPY (GDMS);

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 1842714441     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2004.0045     Document Type: Article

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