Analysis of grain boundaries, twin boundaries and Te precipitates in Cd1-xZnxTe grown by high-pressure Bridgman method

Materials Research Society Symposium - Proceedings

Volumn 487, Issue , 1998, Pages 33-38

  Heffelfinger, J R ^a   Medlin, D L ^a   James, R B ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; GRAIN BOUNDARIES; INTERFACES (MATERIALS); OPTICAL MICROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; TELLURIUM; TRANSMISSION ELECTRON MICROSCOPY; TWINNING;

CADMIUM ZINC TELLURIDE; HIGH PRESSURE BRIDGMAN TECHNIQUE;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0031642649     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)