Characterization of CdTe crystals grown by the Vertical Bridgman method

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 509, Issue 1-3, 2003, Pages 70-75

  Fiederle, M ^a   Fauler, A ^a   Babentsov, V ^b   Franc, J ^c   Konrath, J ^a   Webel, M ^a   Ludwig, J ^a   Benz, K W ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c CHARLES UNIVERSITY   (Czech Republic)

Author keywords

CdTe; Crystal growth; Ge doping; Radiation detector

Indexed keywords

CADMIUM COMPOUNDS; RADIATION DETECTORS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

POLYCRYSTALLINE STRUCTURES;

CRYSTAL GROWTH;

EID: 0043231266     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(03)01552-3     Document Type: Conference Paper

References (8)

1. P. Rudolph, Fundamental studies on Bridgman growth of CdTe, in: B. Mullin (Ed.), Progress in Crystal Growth and Characterization of Mercury Cadmium Telluride and Related Materials, Pergamon Press, Oxford.
2. C. Szelecs, E. Eissler, Current issues of high-pressure Bridgman growth of semi-insulating CdZnTe, in: Semiconductor for Room Temperature Detectors, Material Research Society Proceedings, Vol. 487, 1998.
3. M. Fiederle, A. Fauler, V. Babentsov, K.W. Benz, Growth of 3 inch CdTe crystal from the melt, to be published.
4. Fiederle M., Eiche C., Salk M., Schwarz R., Benz K.W., Stadler W., Hofmann D.M., Meyer B.K. J. Appl. Phys. 84:1998;6689.
5. Chu M., Terterian S., Ting D., Wang C.C., Gurgenian H.K., Mesropian S. Appl. Phys. Lett. 79:2001;2728.
6. Babentsov V., Corregidor V., Castano J.L., Fiederle M., Feltgen T., Benz K.W., Dieguez E. Crystal Res. Technol. 36:2001;537.
7. Hecht K. Z. Phys. 77:1932;235.
8. Fiederle M., Fauler A., Babentsov V., Benz K.W. Defect structure of Ge-doped CdTe. J. Crystal Growth. 243:2002;77.