Distribution of a shallow donor impurity in a p-type CdTe wafer annealed in Cd vapors

Semiconductors

Volumn 31, Issue 5, 1997, Pages 441-443

  Babentsov, V N ^a   Vlasenko, Z K ^a   Vlasenko, A I ^a   Lyubchenko, A V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

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[No Author keywords available]

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EID: 0041194596     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187189     Document Type: Article

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