Advances in the crystal growth and device fabrication technology of CdZnTe room temperature radiation detectors

IEEE Transactions on Nuclear Science

Volumn 51, Issue 3 III, 2004, Pages 1242-1249

  Szeles, Csaba ^a  

^a II VI Inc   (United States)

Author keywords

CdZnTe; Charge transport; Device fabrication; Electrical compensation; Structural defects; X ray and gamma ray detectors

Indexed keywords

CHARGE CARRIERS; CHARGE TRANSFER; CRYSTAL DEFECTS; CRYSTAL GROWTH; GAMMA RAYS; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR DOPING; X RAYS;

CDZNTE; DEVICE FABRICATION; ELECTRICAL COMPENSATION; STRUCTURAL DEFECTS; X-RAY AND GAMMA RAY DETECTORS;

RADIATION DETECTORS;

EID: 3342970548     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.829391     Document Type: Conference Paper

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