Resistivity dependence on Zn concentration in semi-insulating (Cd, Zn)Te

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4784, Issue , 2003, Pages 14-20

  Fiederle, M ^a   Fauler, A ^a   Babentsov, V ^a   Franc, J ^a   Benz, K W ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

Author keywords

(Cd; Compensation; Deep levels; High resistivity; Zn)Te

Indexed keywords

COMPENSATION (PERSONNEL); CRYSTAL GROWTH FROM MELT; ENERGY GAP; TELLURIUM COMPOUNDS; X RAY DETECTORS; X RAYS; ZINC;

DEEP-LEVELS; HIGH RESISTIVITY; PHOTO-INDUCED CURRENT TRANSIENT SPECTROSCOPIES; RESISTIVITY DEPENDENCE; RESISTIVITY DISTRIBUTIONS; SEMI-INSULATING; VERTICAL BRIDGMAN METHOD; ZINC CONCENTRATION;

GAMMA RAYS;

EID: 85076821187     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.450829     Document Type: Conference Paper

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