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Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 458, Issue 1-2, 2001, Pages 113-122

Characterization of CdZnTe crystals grown by HPB method

(7) Komar, V a Gektin, A a Nalivaiko, D a Klimenko, I a Migal, V a Panchuk, O b Rybka, A c

a INSTITUTE FOR SINGLE CRYSTALS (Ukraine)

b CHERNIVTSI NATIONAL UNIVERSITY (Ukraine)

c KHARKOV INSTITUTE OF PHYSICS AND TECHNOLOGY (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CALORIMETRY; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALLIZATION; DIELECTRIC RELAXATION; LASER APPLICATIONS; PHASE INTERFACES; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR GROWTH;

ADIABATIC LASER CALORIMETRY; CADMIUM ZINC TELLURIDE; HIGH PRESSURE BRIDGMAN METHOD; PHOTORELAXATION; THERMORELAXATION DIELECTRIC SPECTROSCOPY;

RADIATION DETECTORS;

EID: 0035251217 PISSN: 01689002 EISSN: None Source Type: Journal
DOI: 10.1016/S0168-9002(00)00856-1 Document Type: Article

Times cited : (37)

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