Characteristics of pentacene organic thin film transistor with top gate and bottom contact

Chinese Physics B

Volumn 17, Issue 5, 2008, Pages 1887-1892

  Yuan, Guang Cai ^b   Xu, Zheng ^a   Zhao, Su Ling ^b   Zhang, Fu Jun ^b   Jiang, Wei Wei ^b   Song, Dan Dan ^b   Zhu, Hai Na ^b   Li, Shao Yan ^b   Huang, Jin Ying ^b   Huang, Hao ^b   Xu, Xu Rong ^b  

^a BEIJING JIAOTONG UNIVERSITY   (China)

^b Ministry of Education ^*

Author keywords

Pentacene; Subthreshold slope; Thin film transistor; Threshold voltage

Indexed keywords

DIGITAL CIRCUITS; FIELD EFFECT TRANSISTORS; OPTICAL DESIGN; PHOTOTRANSISTORS; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON COMPOUNDS; SOLIDS; THICK FILMS; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS;

BOTTOM CONTACT (BC); HIGH PERFORMANCE; ORGANIC THIN FILM TRANSISTOR (OTFT); ORGANIC THIN FILM TRANSISTORS (O TFT); PENTACENE (PEN); TOP GATE (TG);

THIN FILM DEVICES;

EID: 46749100300     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/17/5/057     Document Type: Article

References (29)

1. Han S H, Kim J H, Janga J, Cho S M, Oh M H, Le S H and Choo D J 2006 Appl. Phys. Lett. 88 073519
2. Bana D, Han S, Lu Z H, Oogarah T, Spring Thorpe A J and Liu H C 2007 Appl. Phys. Lett. 90 093108
3. Zhang F J, Aollmer A, Zhang J, Xu Z, Rabe J P and Koch N 2007 Organic Electronics 8 606
4. Koch N and Vollmer A 2006 Appl. Phys. Lett. 89 162107
5. Cao Q J, Zhang Y M, Zhang Y M, Lu H L, Wang Y H, Chang Y C and Tang X Y 2007 Chin. Phys. 16 1097
6. Jiang T, Zhang H M, Wang W, Hu H Y and Dai X Y 2006 Chin. Phys. 15 1339
7. Hulea I N, Fratini S, Xie H, Mulder C L, Iossad N N, Rastelli G, Ciuchi S and Morpurgo A F 2006 Nature Materials 5 982
8. Halik M, Klauk H, Zschieschang U, Schmid G, Radlik W and Weber W 2002 Adv. Mater. 14 1717
9. Shtein M, Mapel J, Benziger J B and Forrest S R 2002 Appl. Phys. Lett. 81 268
10. Knipp D, Street R A, Volkel A and Ho J 2003 J. Appl. Phys. 93 347
11. Kelley T W, Boardman L D, Dunbar T D, Muyres D V, Pellerite M J and Smith T P 2003 J. Phys. Chem. B 107 5877
12. Koch N, Vollmer A, Duhm S, Sakamoto Y and Suzuki T 2007 Adv. Mater. 19 112
13. Zhao S Y, Wu C Y, Liu Z J, Li X D, Wang Z, Meng Z G, Xiong S Z and Zhang F 2006 Acta Phys. Sin. 55 6095 (in Chinese)
14. Luisier M, Schenk A and Fichtner W 2007 Appl. Phys. Lett. 90 102103
15. Halik M, Klauk H, Zschieschang U, Schmid G, Dehm C, Schütz M, Maisch S, Effenberger F, Brunnbauer M and Stellacci F 2004 Nature 431 963
16. Wang Y, Jia S, Chen Z J and Ji L J 2006 Chin. Phys. 15 2297
17. Liang W, Daniel Fine and Ananth Dodabalapurb 2004 Appl. Phys. Lett. 85 6386
18. Wang J, Wang H B, Yan X J, Huang H C and Yana D H 2005 Appl. Phys. Lett. 87 093507
19. Berliocchil M, Manentil M, Bolognesil A, Carlol A D, Luglil P, Paolesse R, Mandoy F, Natale C D, Proietti E and Petrocco G 2004 Semicond. Sci. Technol. 19 354
20. Schroeder R, Majewski L A and Grell M 2003 Appl. Phys. Lett. 83 3201
21. Zhang J, Wang J, Wang H B and Yana D H 2004 Appl. Phys. Lett. 84 142
22. Halik M, Klauk H, Zschieschang U, Schmid G, Radlik W, Ponomarenko S, Kirchmeyer S and Weber W 2003 J. Appl. Lett. 93 2977
23. Gundlach D J, Zhou L, Nichols J A, Jackson T N, Necliudovc P V and Shur M S 2006 J. Appl. Lett. 100 024509
24. Kim W J, Koo W H, Jo S J, Kim C S, Baika H K, Jiyoul L and Seongil I 2005 J. Vac. Sci. Technol. B 23 2357
25. Roy V A L, Zhi Y G, Xu Z X, Yu S C, Wai P, Chan H and Che C M 2005 Adv. Mater. 17 1258
26. Song D H, Choi M H, Kim J Y, Janga J and Kirchmeyer S 2007 Appl. Phys. Lett. 90 053504
27. da Silva Filho D A, Kim E-G and Bredas L-L 2005 Adv. Mater. 17 1072
28. Wang J, Yan X J, Xu Y X, Zhang J and Yana D H 2004 Appl. Phys. Lett. 85 5424
29. Vikram C Sundar, Jana Zaumseil, Vitaly Podzorov, Etienne Menard, Robert L Willett, Takao Someya, Michael E Gershenson and John A Rogers 2004 Science 303 1644