Electrode-molecular semiconductor contacts: Work-function-dependent hole injection barriers versus Fermi-level pinning

Applied Physics Letters

Volumn 89, Issue 16, 2006, Pages

  Koch, N ^a   Vollmer, A ^b  

^a HUMBOLDT UNIVERSITY   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSITIONS; FERMI LEVEL; MOLECULAR STRUCTURE; PHOTOEMISSION; SEMICONDUCTOR MATERIALS;

FERMI-LEVEL PINNING; HOLE INJECTION BARRIER (HIB); SCHOTTKY-MOTT LIMIT;

ELECTRODES;

EID: 33750177202     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2364166     Document Type: Article

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