A CAD oriented quasi-analytical large-signal drain current model for 4H-SiC MESFETs

Chinese Physics

Volumn 16, Issue 4, 2007, Pages 1097-1100

  Cao, Quan Jun ^a   Zhang, Yi Men ^a   Zhang, Yu Ming ^a   Lü, Hong Liana ^a   Wang, Yue Hu ^a   Chang, Yuan Cheng ^a   Tang, Xiao Yan ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

4H SiC MESFET; CAD; Drain current model; Large signal

Indexed keywords

COMPUTER AIDED DESIGN; CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; MATHEMATICAL MODELS;

DRAIN CURRENT MODEL; POWER ADDED EFFICIENCY;

MESFET DEVICES;

EID: 34250222497     PISSN: 10091963     EISSN: 17414199     Source Type: Journal    
DOI: 10.1088/1009-1963/16/4/039     Document Type: Article

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