Organic thin-film transistors having inorganic/organic double gate insulators

Applied Physics Letters

Volumn 85, Issue 22, 2004, Pages 5424-5426

  Wang, Jun ^a   Yan, Xuanjun ^a   Xu, Yanxia ^a   Zhang, Jian ^a   Yan, Donghang ^a  

^a CHANGCHUN INSTITUTE OF APPLIED CHEMISTRY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC INSULATORS; ELECTRIC POTENTIAL; EVAPORATION; GATES (TRANSISTOR); LEAKAGE CURRENTS; SPUTTERING; TANTALUM COMPOUNDS; VAPOR DEPOSITION;

BOTTOM-CONTACT (BC) TRANSISTORS; DOUBLE GATE INSULATORS; GATE INSULATORS;

THIN FILM TRANSISTORS;

EID: 11044226767     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1825054     Document Type: Article

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