Effects of manganese oxide-mixed abrasive slurry on the tetraethyl orthosilicate oxide chemical mechanical polishing for planarization of interlayer dielectric film in the multilevel interconnection

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 4, 2008, Pages 996-1001

  Seo, Yong Jin ^a   Park, Sung Woo ^b   Lee, Woo Sun ^a  

^a Daebul University   (South Korea)

^b Chosun University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABRASIVES; BROADBAND AMPLIFIERS; CHEMICAL FINISHING; CHEMICAL POLISHING; DIELECTRIC FILMS; MANGANESE; MANGANESE COMPOUNDS; NANOTECHNOLOGY; OXIDES; POLISHING; SILICA; SILICATE MINERALS; SILICON COMPOUNDS; SIZE DISTRIBUTION; SLURRIES; SURFACE DEFECTS;

(1 1 0) SURFACE; ABRASIVE SLURRIES; CHEMICAL-MECHANICAL POLISHING (CMP); EXPERIMENTAL RESULTS; HIGH REMOVAL RATES; INTER LAYER DIELECTRIC (ILD); MANGANESE (IV) OXIDE; MECHANICAL POLISHING; MULTI-LEVEL INTERCONNECTIONS; NON UNIFORMITIES; OPTIMAL PERFORMANCES; PARTICLE SIZE DISTRIBUTION (PSZ); PLANARIZATION; POLISHING SELECTIVITY; REMOVAL RATE (RR); SLURRY STABILITY; TETRAETHYL ORTHOSILICATE (TEOS);

CHEMICAL MECHANICAL POLISHING;

EID: 46449117303     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2936225     Document Type: Article

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