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Electrochemical and Solid-State Letters

Volumn 4, Issue 12, 2001, Pages

Chemical mechanical planarization of copper and barrier layers by manganese(IV) oxide slurry

(3) Hara, Tohru a Kurosu, Toshiaki a Doy, Toshiro b

a HOSEI UNIVERSITY (Japan)

b SAITAMA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIOXIDANTS; COPPER; DOPING (ADDITIVES); MANGANESE COMPOUNDS; POLYCRYSTALLINE MATERIALS; SURFACES; TANTALUM COMPOUNDS;

CHEMICAL MECHANICAL PLANARIZATION; DEEP DISHING; MANGANESE OXIDE SLURRY; POLYCRYSTALLINE TANTALUM NITRIDE BARRIER LAYER;

CHEMICAL MECHANICAL POLISHING;

EID: 0035757926 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.1413702 Document Type: Article

Times cited : (15)

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