Reduction of process defects using a modified set-up for chemical mechanical polishing equipment

Microelectronic Engineering

Volumn 65, Issue 4, 2003, Pages 371-379

  Seo, Yong Jin ^a   Kim, Sang Yong ^b   Lee, Woo Sun ^c  

^a Daebul University   (South Korea)

^b ANAM Semiconductor Co Inc   (South Korea)

^c Chosun University   (South Korea)

Author keywords

Chemical mechanical polishing (CMP); Deionized water (DIW); High spray bar (HSB); Hot spot; Point of use (POU); Purified nitrogen gas (PN2)

Indexed keywords

DEFECTS; DIELECTRIC MATERIALS; NITROGEN; WATER;

HIGH SPRAY BAR (HSB);

CHEMICAL MECHANICAL POLISHING;

EID: 0038298784     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00004-2     Document Type: Article

References (9)

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