Chemical mechanical planarization characteristics of ferroelectric film for FRAM applications

Journal of the Korean Physical Society

Volumn 45, Issue 3, 2004, Pages 769-772

  Seo, Yong Jin ^a   Park, Sung Woo ^a  

^a Daebul University   (South Korea)

Author keywords

BaSrTiO3 (BST); CMP (chemical mechanical polishing); FRAM; RMS (root mean square); Sol gel; WIWNU (within wafer non uniformity)

Indexed keywords

EID: 6344270182     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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