Structure, paramagnetic defects and light-emission of carbon-rich a-SiC:H films

Journal of Applied Physics

Volumn 103, Issue 12, 2008, Pages

  Vasin, A V ^a   Kolesnik, S P ^a   Konchits, A A ^a   Rusavsky, A V ^a   Lysenko, V S ^a   Nazarov, A N ^a   Ishikawa, Y ^b   Koshka, Y ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b JAPAN FINE CERAMICS CENTER   (Japan)

^c MISSISSIPPI STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; CARBON FILMS; GRAPHITE; GRAPHITIZATION; HOLE CONCENTRATION; HYDROGEN; HYDROGEN BONDS; LIGHT EMISSION; LUMINESCENCE; PARAMAGNETIC MATERIALS; PASSIVATION; PHOTOACOUSTIC EFFECT; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; STEEL ANALYSIS; STEEL METALLOGRAPHY; SULFATE MINERALS;

AMERICAN INSTITUTE OF PHYSICS (AIP); CARBON RICH; COMPETING EFFECTS; CONCENTRATION (COMPOSITION); EVOLUTION (CO); H FILMS; HIGH TEMPERATURE TREATMENT (HTT); HYDROGENATED SILICON CARBIDE (A SIC:H) FILMS; INTER ATOMIC POTENTIAL; LOCAL STRUCTURES; NONRADIATIVE (NR) RECOMBINATION; PARAMAGNETIC (PM) STATE; PARAMAGNETIC DEFECTS; PHOTOEXCITED ELECTRON-HOLE PAIRS; PHOTOLUMINESCENCE (PL); RADIATIVE RECOMBINATION (RR); STRONG ENHANCEMENT; TEMPERATURE RANGES; TEMPERATURE TREATMENTS; VACUUM ANNEALING;

DEFECT STRUCTURES;

EID: 46449112649     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2946446     Document Type: Article

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