Effect of radio-frequency bias voltage on the optical and structural properties of hydrogenated amorphous silicon carbide

Journal of Applied Physics

Volumn 89, Issue 11 I, 2001, Pages 6153-6158

  Cui, J ^a   Rusli, ^a   Yoon, S F ^a   Teo, E J ^b   Yu, M B ^a   Chew, K ^a   Ahn, J ^a   Zhang, Q ^a   Osipowicz, T ^b   Watt, F ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035356767     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1367398     Document Type: Article

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