Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition

Journal of Applied Physics

Volumn 89, Issue 5, 2001, Pages 2699-2705

  Cui, J ^a   Rusli, R ^a   Yoon, S F ^a   Yu, M B ^a   Chew, K ^a   Ahn, J ^a   Zhang, Q ^a   Teo, E J ^b   Osipowicz, T ^b   Watt, F ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 18044402971     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1344218     Document Type: Article

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