Comparative EPR study of hydrogenated and unhydrogenated amorphous silicon carbide thin films

Applied Surface Science

Volumn 184, Issue 1-4, 2001, Pages 268-272

  Christidis, T ^a   Tabbal, M ^a   Isber, S ^a   El Khakani, M A ^b   Chaker, M ^b  

^a AMERICAN UNIVERSITY OF BEIRUT   (Lebanon)

^b INRS EMT   (Canada)

Author keywords

a SiC; a SiC:H; EPR; PECVD; PLD; Silicon carbide

Indexed keywords

PARAMAGNETIC RESONANCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; RAPID THERMAL ANNEALING; SILICON CARBIDE; STOICHIOMETRY; THIN FILMS;

SPIN DENSITY;

AMORPHOUS SILICON;

EID: 0035852166     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00507-4     Document Type: Article

References (15)