Self-assembled lateral Bi-quantum-dot molecule formation by gas-source molecular beam epitaxy

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 735-739

  Suraprapapich, S ^a,b   Shen, Y M ^a   Odnoblyudov, V A ^a   Fainman, Y ^a   Panyakeow, S ^b   Tu, C W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b CHULALONGKORN UNIVERSITY   (Thailand)

Author keywords

A1. Bi quantum dot molecule; A3. Gas source molecular beam epitaxy

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEPOSITION; GAS SOURCE MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE;

BI QUANTUM DOT MOLECULES (BQDM); GAUSSIAN FITTED CURVES; PHOTOLUMINESCENCE SPECTRA; THERMAL QUENCHING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33947320929     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.120     Document Type: Article

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